2SC3552全国供应商、价格、PDF

2SC3552 PDF下载

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• 大小：81K
• 厂家：Wing Shing Computer Components
• 描述： 2SC3552 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL MT-100 CONDITIONS VBE = 0V TYP MAX 1100 500 12 150 3 2.0 1.0UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 4.5A; IB = 1.0A IF = 4.5A IC=4.5A,IB1=-IB2=0.8A,VCC=80V 1.5 0.3 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 1100 500 5 12 3 150 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=1000V VEB=5V IC=1mA IC = 4.5A; IB = 1A IC = 1.0A; VCE = 5V IC = 1.0A; VCE = 12V VCB = 10V IC=4.5A,IB1=-IB2=0.8